Acoustic sensor and acoustic sensor system

ABSTRACT

According to one embodiment, an acoustic sensor includes a base and a first strain sensing element. The base includes a support and a first film unit supported by the support. The first film unit is flexible. The first strain sensing element is provided on a first surface of the first film unit. The first strain sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer. An angle between a magnetization of the first magnetic layer and a magnetization of the second magnetic layer is variable by an acoustic wave. The acoustic wave is transmitted to a first film unit by a first transmitting material in contact with the first film unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2013-196205, filed on Sep. 20, 2013; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to an acoustic sensor andan acoustic sensor system.

BACKGROUND

Acoustic emission (hereinafter, referred to as “AE”) is used as a methodfor nondestructive testing using an ultrasonic sensor, for example. Itis desired for acoustic sensors using such acoustic emission to improvesensitivity.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating an acousticsensor according to a first embodiment;

FIG. 2 is a schematic cross-sectional view illustrating an acousticsensor according to the first embodiment;

FIG. 3 is a schematic perspective view illustrating part of the acousticsensor according to the embodiment;

FIG. 4A to FIG. 4C are schematic perspective views illustratingoperations of the acoustic sensor according to the embodiment;

FIG. 5A and FIG. 5B are schematic perspective views illustrating theacoustic sensor according to the embodiment;

FIG. 6A to FIG. 60 are schematic views illustrating acoustic sensorsaccording to a second embodiment;

FIG. 7 is a schematic plan view illustrating part of an acoustic sensoraccording to the second embodiment;

FIG. 8 is a schematic plan view illustrating an acoustic sensoraccording to a third embodiment;

FIG. 9 is a schematic diagram showing characteristics of the acousticsensor;

FIG. 10A to FIG. 10D are schematic plan views illustrating parts ofacoustic sensors according to a fourth embodiment;

FIG. 11A and FIG. 116 are schematic diagrams illustrating acousticsensors according to a fifth embodiment;

FIG. 12 is a schematic cross-sectional view illustrating an acousticsensor according to a sixth embodiment;

FIG. 13 is a schematic diagram illustrating an acoustic sensor accordingto the sixth embodiment;

FIG. 14 is a schematic diagram illustrating an acoustic sensor accordingto the sixth embodiment;

FIG. 15A to FIG. 15E are schematic cross-sectional views showingacoustic sensors according to a seventh embodiment;

FIG. 16 is a schematic diagram showing an acoustic emission wave; and

FIG. 17 is a schematic diagram illustrating an acoustic sensor systemaccording to an eighth embodiment.

DETAILED DESCRIPTION

According to one embodiment, an acoustic sensor includes a base and afirst strain sensing element. The base includes a support and a firstfilm unit supported by the support. The first film unit is flexible. Thefirst strain sensing element is provided on a first surface of the firstfilm unit. The first strain sensing element includes a first magneticlayer, a second magnetic layer, and a first intermediate layer providedbetween the first magnetic layer and the second magnetic layer. Anacoustic wave is transmitted to a first film unit via a firsttransmitting material provided in contact with the first film unit. Anangle between a magnetization of the first magnetic layer and amagnetization of the second magnetic layer is variable in accordancewith the acoustic wave.

According to one embodiment, an acoustic sensor includes a base, a firststrain sensing element and a first transmitting material. The baseincludes a support and a first film unit supported by the support. Thefirst film unit is flexible. The first strain sensing element isprovided on a first surface of the first film unit. The first strainsensing element includes a first magnetic layer, a second magneticlayer, and a first intermediate layer provided between the firstmagnetic layer and the second magnetic layer. The first transmittingmaterial is in contact with the first film unit and configured totransmit an acoustic wave to the first film unit.

Various embodiments will be described hereinafter with reference to theaccompanying drawings.

The drawings are schematic or conceptual; and the relationships betweenthe thickness and width of portions, the proportions of sizes amongportions, etc. are not necessarily the same as the actual valuesthereof. Further, the dimensions and proportions may be illustrateddifferently among drawings, even for identical portions.

In the specification of this application and the drawings, componentssimilar to those described in regard to a drawing thereinabove aremarked with the same reference numerals, and a detailed description isomitted as appropriate.

First Embodiment

FIG. 1 is a schematic cross-sectional view illustrating an acousticsensor according to a first embodiment.

As shown in FIG. 1, an acoustic sensor 300 a according to the embodimentincludes a base 70 and a sensor unit 72. The sensor unit 72 is providedon the base 70, for example. The sensor unit 72 includes a strainsensing element 50 (a first strain sensing element S1). The base 70includes a support 71 and a transducer thin film 64 (a first film unitF1). The transducer thin film 64 has a film surface 64 a. The transducerthin film 64 is flexible. The transducer thin film 64 is deformable. Thestrain sensing element 50 is fixed to the film surface 64 a, forexample. The strain sensing element 50 is provided on the film surface64 a, for example.

In the specification, “fixed” is not limited to the strain sensingelement and the film surface being directly fixed together, and includesthe case where the strain sensing element and the film surface areindirectly fixed via another component. That is, “fixed” refers to therelative positional relationship between the strain sensing element andthe film surface being fixed.

The transducer thin film 64 is deformed by a pressure applied from theoutside (for example, bends). The transducer thin film 64 transducesstrain to the strain sensing element 50. The pressure from the outsideincludes pressure caused by sound waves, ultrasonic waves, or the like.

The thin film that forms the transducer thin film 64 may be continuouslyformed on the outside of the portion that is deformed by an externalpressure. In the specification, the portion that is deformed by anexternal pressure is referred to as the transducer thin film. Thetransducer thin film 64 is surrounded by a fixed end (for example, theedge 64 eg). In this example, the support 71 includes the fixed end. Thethickness of the transducer thin film 64 is a uniform thickness smallerthan the thickness of the fixed end, for example.

The strain sensing element 50 is provided on at least one of the uppersurface and the lower surface of the transducer thin film 64, forexample. The strain sensing element 50 includes a first magnetic layer10, a second magnetic layer 20, and a first intermediate layer 15. Thefirst intermediate layer 15 is provided between the first magnetic layer10 and the second magnetic layer 20.

The strain sensing element 50 is provided on a position of thetransducer thin film 64 where the amount of strain is large, forexample. That is, the strain sensing element 50 is provided on at leastone of a central portion and an edge portion of the transducer thin film64, for example.

The acoustic sensor 300 a according to the embodiment is an acousticsensor using a spin element. A plurality of strain sensing elements 50may be provided, for example. The sensitivity is improved by using aplurality of strain sensing elements 50.

In the embodiment, a second strain sensing element may be furtherprovided, for example. The second strain sensing element is provided ona first surface F1 a. The second strain sensing element includes a thirdmagnetic layer, a fourth magnetic layer, and a second intermediate layerprovided between the third magnetic layer and the fourth magnetic layer(see FIG. 6B). In the embodiment, a plurality of strain sensing elementsmay be provided, for example. The number of strain sensing elements maybe two or more.

The base 70 includes a hollow portion 70 h. The base 70 includes anon-hollow portion 70 e. The non-hollow portion 70 e is juxtaposed tothe hollow portion 70 h.

The hollow portion 70 h is a portion where the material forming thenon-hollow portion 70 e is not provided. The hollow portion 70 h may befilled with a transmitting material (a first transmitting material TM1),for example. The transmitting material contains at least one of a liquidand a solid. The acoustic sensor is used at 0° C. to 80° C., forexample. The transmitting material may be in a liquid state at roomtemperature (for example, 25° C.), for example. The transmittingmaterial may be in a solid state at room temperature, for example. Thetransmitting material may be in a gel form at room temperature, forexample.

The acoustic sensor according to the embodiment (the acoustic sensor 300a) includes the base 70 and the first strain sensing element S1 (thestrain sensing element 50). The base 70 includes the support 71 and thefirst film unit F1 (the transducer thin film 64). The first film unit F1is supported by the support 71. The first film unit F1 is deformable.The base 70 can house the first transmitting material TM1 in the spacepartitioned by the support 71 and the first film unit F1 (the hollowportion 70 h), for example. The first strain sensing element S1 isprovided on the surface of the first film unit F1 (the first surface F1a). The first strain sensing element S1 includes the first magneticlayer 10, the second magnetic layer 20, and the first intermediate layer15. The first intermediate layer 15 is provided between the firstmagnetic layer 10 and the second magnetic layer 20.

An acoustic wave is transmitted to the first film unit F1 by the firsttransmitting material TM1 in contact with the first film unit F1. Asdescribed later, the angle between the magnetization of the firstmagnetic layer 10 and the magnetization of the second magnetic layer 20can be changed by the acoustic wave received by the first film unit F1.

The acoustic sensor 300 a is installed facing a measuring object 810,for example. The first transmitting material TM1 is disposed between theacoustic sensor 300 a and the measuring object 810. The acousticimpedance of the first transmitting material TM1 is lower than theacoustic impedance of the measuring object 810.

The hollow portion 70 h is filled with a liquid, for example. Theacoustic impedance of the liquid put in is lower (smaller) than theacoustic impedance of the measuring object 810, for example. Adeformable material may be included in the hollow portion 70 h, forexample. Thereby, the transducer thin film 64 can be deformed. Theacoustic impedance of the deformable material is lower than the acousticimpedance of the measuring object 810, for example.

The acoustic sensor 300 a includes the base 70, the first strain sensingelement S1, and the first transmitting material TM1. The firsttransmitting material TM1 is in contact with the first film unit F1. Thefirst transmitting material TM1 is provided between the measuring object810 and the first film unit F1. The first transmitting material TM1transmits an acoustic wave to the first film unit F1. The acousticsensor 300 a is an ultrasonic sensor, for example.

The measuring object 810 is a metal, an alloy, a bedrock, concrete,wood, a plant, or others, for example. The acoustic impedance of iron is46 MRayI at 25° C., for example. The acoustic impedance of copper is 44MRayI. The acoustic impedance of aluminum is 17 MRayI. The acousticimpedance of concrete is 8 MRayI. The acoustic impedance of wood(evergreen oak) is 3 MRayI.

The medium put in the hollow portion 70 h is an alcohol (glycerin), oil,water, mercury, rubber, wax, or others, for example. The acousticimpedances of these are lower than the acoustic impedance of themeasuring object 810.

An acoustic coupler 73 and the medium put in the hollow portion 70 hconstitute an acoustic matching layer, for example. As the acousticmatching layer, glycerin, water, mercury, rubber (for example,styrene-butadiene rubber), or silicone is used, for example. Theacoustic impedance of glycerin is 2.4 MRayI at 25° C., for example. Theacoustic impedance of water is 1.5 MRayI. The acoustic impedance ofmercury is 19.8 MRayI. The acoustic impedance of rubber (for example,styrene-butadiene rubber) is 1.7 MRayI. The acoustic impedance ofsilicone is 19.5 MRayI.

The acoustic impedance of air is 410 RayI, for example. The acousticimpedance of air is approximately 1/10,000 of the acoustic impedance ofthe medium put in the hollow portion 70 h and the like (for example, notless than 1/50,000 and not more than 1/1000). If there is gas betweenthe measuring object 810 and the transducer thin film 64, an elasticwave may be reflected at the boundary surface. In this case, it may bedifficult to detect the elastic wave using the acoustic sensor.

In this example, the base 70 is fixed to a housing 90 by a base support95.

The acoustic coupler 73 is put in between the housing 90 and the base70. The acoustic impedance of the acoustic coupler 73 is lower than theacoustic impedance of the measuring object 810, for example. Thematerial used for the acoustic coupler 73 may not be the same as thematerial put in the hollow portion 70 h. That is, the acoustic matchinglayer may be a multiple-layer structure.

When the material of the acoustic coupler 73 and the material of themedium put in the hollow portion 70 h are different from each other, theacoustic matching layer is a multiple-layer structure, for example. Alsowhen an acoustic coupler 73 of a multiple-layer structure is used, theacoustic matching layer is a multiple-layer structure. When an acousticmatching layer of a multiple-layer structure is used, it is preferablethat the acoustic impedances of the layers be set to decrease graduallyfrom the measuring object 810 toward the transducer thin film 64, forexample. Thereby, the energy loss in the propagation path of the elasticwave is suppressed.

The filler (the first transmitting material TM1) includes a first layerM01 and a second layer M02 provided between the first layer M01 and thefirst film unit F1, for example. The acoustic impedance of the secondlayer M02 is preferably lower than the acoustic impedance of the firstlayer M01. The acoustic impedance of the second layer M02 may be higherthan the acoustic impedance of the first layer M01, for example.

When a pressure (including a sound, an ultrasonic wave, or the like) isapplied to the transducer thin film 64 from the outside, the transducerthin film 64 is deformed. Accordingly, a strain is generated in thestrain sensor (the sensor unit 72) provided on the transducer thin film64. Thus, the transducer thin film 64 transmits (transduces) a signal ofpressure to the sensor unit 72. The signal of pressure is converted to asignal of strain in the sensor unit 72.

The strain sensor (the sensor unit 72) is provided on at least one ofthe upper surface and the lower surface of the transducer thin film 64.

In this example, the transducer thin film 64 is provided on the upperside of the hollow portion 70 h.

A surface parallel to the film surface 64 a is defined as the X-Y plane.In the case where the film surface 64 a is not a flat surface, a planeincluding the edge 64 eg of the film surface 64 a is defined as the X-Yplane. The direction perpendicular to the X-Y plane is defined as theZ-axis direction.

The acoustic sensor 300 a is susceptible to external noise. In thisexample, components such as the base 70 and the sensor unit 72 mentionedabove are surrounded by the housing 90.

For the housing 90, aluminum, stainless steel, or the like is used, forexample. Thereby, the housing 90 functions as a magnetic shield, forexample.

The acoustic sensor is fixed to the measuring object 810, for example.The housing 90 is fixed to the measuring object 810 by a fixing unit 96(a fixing material).

For the fixing unit 96, an epoxy-based adhesive, wax, and the like areused, for example. The acoustic sensor 300 a is stuck to the measuringobject 810 so that there is no gas between the measuring object 810 andthe acoustic coupler 73.

The housing 90 is provided in the acoustic sensor 300 a, for example.The base 70, the first strain sensing element S1, and the firsttransmitting material TM1 are provided in the housing 90.

FIG. 2 is a schematic cross-sectional view illustrating an acousticsensor according to the first embodiment.

As shown in FIG. 2, a bottom plate 91 integrated with the housing 90 maybe provided on the bottom surface of an acoustic sensor 300 b. The firsttransmitting material is disposed between the bottom plate 91 and thefirst film unit F1. In this example, an acoustic coupler material 97 isprovided between the bottom plate 91 and the measuring object 810. Theacoustic sensor 300 b is stuck to the measuring object 810.

As the acoustic coupler material 97, an epoxy-based adhesive, wax,grease, a silicone compound, or the like is used, for example. Theacoustic sensor 300 b is stuck to the measuring object 810 so that thereis no gas between the measuring object 810 and the acoustic couplermaterial 97.

When the measuring object 810 is a metal or the like, a magnet or thelike may be used as the fixing unit 96, for example.

The transducer thin film 64 includes an insulating layer, for example.The transducer thin film 64 contains a metal material, for example. Thetransducer thin film 64 contains silicon oxide, silicon nitride, or thelike, for example. The thickness of the transducer thin film 64 is notless than 200 nm and not more than 3 μm, for example. It is preferablynot less than 300 nm and not more than 1.5 μm. The diameter of thetransducer thin film 64 is not less than 1 μm and not more than 3 mm,for example. It is preferably not less than 60 μm and not more than 1mm. The transducer thin film 64 is flexible in the Z-axis directionperpendicular to the film surface 64 a, for example.

One end of the strain sensing element 50 is connected to a firstinterconnection 57. The other end of the strain sensing element 50 isconnected to a second interconnection 58. The first interconnection 57and the second interconnection 58 extend from the strain sensing element50 toward the base 70, for example.

When the acoustic matching layer includes a multiple-layer structure,first, the hollow portion 70 h of the base 70 is filled with a liquid(the first stage), for example. After that, another liquid (the secondstage) is enclosed in a flat manner on the lower side of the base 70 inthe housing 90. Next, grease or an adhesive is applied to the contactsurface between the measuring object 810 and the acoustic sensor, forexample.

A magnetic shield package is used as the housing 90, for example. Ametal shield film is formed above a chip, and the housing 90 forms ametal plate shield. A metal shield film is formed above a chip, forexample.

FIG. 3 is a schematic perspective view illustrating part of the acousticsensor according to the embodiment.

As shown in FIG. 3, a strain resistance change unit 50 s (the strainsensing element 50) includes the first magnetic layer 10, the secondmagnetic layer 20, and the first intermediate layer 15 provided betweenthe first magnetic layer 10 and the second magnetic layer 20, forexample. The first intermediate layer 15 is a nonmagnetic layer.

In this example, the first magnetic layer 10 is a magnetization freelayer. The second magnetic layer 20 is a magnetization fixed layer or amagnetization free layer, for example.

The direction from the second magnetic layer 20 toward the firstmagnetic layer 10 is defined as the Z-axis direction. One directionperpendicular to the Z-axis direction is defined as the X-axisdirection. The direction perpendicular to the X-axis direction and theZ-axis direction is defined as the Y-axis direction.

In the following, operations of the strain sensing element 50 aredescribed for the case where the second magnetic layer 20 is amagnetization fixed layer and the first magnetic layer 10 is amagnetization free layer. In the strain sensing element 50, “inversemagnetostriction effect” that ferromagnetic materials have and “MReffect” that is exhibited in the strain resistance change unit 50 s areutilized.

The “MR effect” is a phenomenon in which, in a stacked film including amagnetic material, the value of the electric resistance of the stackedfilm changes due to the change in magnetization of the magnetic materialcaused by the application of an external magnetic field. The MR effectincludes GMR (giant magnetoresistance) effect, TMR (tunnelingmagnetoresistance) effect, or the like, for example. The MR effect isexhibited by passing a current through the strain resistance change unit50 s to read the change in relative angle between the magnetizationdirections as an electric resistance change. Based on the stress appliedto the strain sensing element 50, a tensile stress is applied to thestrain resistance change unit 50 s, for example. The MR effect isexhibited due to the inverse magnetostriction effect when the directionof the magnetization of the first magnetic layer 10 (a magnetizationfree layer) and the direction of the tensile stress applied to thesecond magnetic layer 20 are different. The resistance in the lowresistance state is denoted by R, and the amount of change in electricresistance that changes due to the MR effect is denoted by ΔR. ΔR/R isreferred to as the “MR ratio.”

FIG. 4A to FIG. 4C are schematic perspective views illustratingoperations of the acoustic sensor according to the embodiment.

The drawings illustrate relationships between the magnetizationdirection in the strain sensing element 50 and the direction of tensilestress.

FIG. 4A shows a state where no tensile stress is applied. In thisexample, the direction of the magnetization of the second magnetic layer20 (a magnetization fixed layer) is the same as the direction of themagnetization of the first magnetic layer 10 (a magnetization freelayer).

FIG. 4B shows a state where a tensile stress is applied. In thisexample, a tensile stress is applied along the X-axis direction. Thetensile stress along the X-axis direction is applied to the strainsensing element 50 by the deformation of the transducer thin film 64,for example. In this example, the tensile stress is applied in adirection orthogonal to the direction of the magnetization of the secondmagnetic layer 20 (a magnetization fixed layer) and the direction of themagnetization of the first magnetic layer 10 (a magnetization freelayer) (in this example, the Y-axis direction). At this time, themagnetization of the first magnetic layer 10 (a magnetization freelayer) rotates so as to become the same direction as the direction ofthe tensile stress. This is referred to as “inverse magnetostrictioneffect.” The magnetization of the second magnetic layer 20 (amagnetization fixed layer) is fixed. Thus, by the rotation of themagnetization of the first magnetic layer 10 (a magnetization freelayer), the relative angle between the direction of the magnetization ofthe second magnetic layer 20 (a magnetization fixed layer) and thedirection of the magnetization of the first magnetic layer 10 (amagnetization free layer) is changed.

The magnetization direction of the second magnetic layer 20 (amagnetization fixed layer) illustrated in FIG. 4B is an example. Themagnetization direction may not be the direction shown in the drawing.

The easy axis of magnetization in the inverse magnetostriction effectvaries with the sign of the magnetostriction constant of theferromagnetic material.

A large number of materials exhibiting a large inverse magnetostrictioneffect have a positive magnetostriction constant. In the case where thesign of the magnetostriction constant is plus, the direction of themagnetization easy axis is the direction of the tensile stress, asdescribed above. At this time, the magnetization of the first magneticlayer 10 (a magnetization free layer) rotates toward the direction ofthe magnetization easy axis, as mentioned above.

In the case where the magnetostriction constant of the first magneticlayer 10 (a magnetization free layer) is positive, the magnetizationdirection of the first magnetic layer 10 (a magnetization free layer) isset to a direction different from the direction of the tensile stress,for example. On the other hand, in the case where the magnetostrictionconstant is negative, a direction perpendicular to the direction of thetensile stress is the direction of the magnetization easy axis.

FIG. 4C shows a state where the magnetostriction constant of the firstmagnetic layer 10 is negative. In this case, the magnetization directionof the first magnetic layer 10 (a magnetization free layer) is set to adirection different from the directions perpendicular to the direction(in this example, the X-axis direction) of the tensile stress.

In this example, the magnetization direction of the first magnetic layer10 is shown as the magnetization direction of the second magnetic layer20 (a magnetization fixed layer). The magnetization direction may not bethe direction shown in the drawing.

The electric resistance of the strain sensing element 50 (the strainresistance change unit 50 s) changes due to the MR effect in accordancewith the angle between the magnetization direction of the first magneticlayer 10 and the magnetization direction of the second magnetic layer20, for example.

The magnetostriction constant (λs) represents the magnitude of thedeformation when a ferromagnetic layer is saturated in a certaindirection by an external magnetic field. It is assumed that the lengthof a magnetic layer is L in a state where there is no external magneticfield, for example. It is assumed that the length of the magnetic layerhas changed by ΔL when an external magnetic field is applied. At thistime, the magnetostriction constant λs is expressed by ΔL/L. The amountof change varies with the magnitude of the magnetic field. Themagnetostriction constant λs is ΔL/L in a state where the magnetizationof the magnetic layer is saturated by a sufficient magnetic field.

In the case where the second magnetic layer 20 is a magnetization fixedlayer, an alloy material containing at least one of Fe, Co, and Ni isused for the second magnetic layer 20, for example. Furthermore, amaterial in which an additive element is added to the material mentionedabove or the like is used for the second magnetic layer 20. CoFe alloy,CoFeB alloy, NiFe alloy, or the like is used for the second magneticlayer 20, for example. The thickness of the second magnetic layer 20 isnot less than 2 nanometers (nm) and not more than 6 nanometers (nm), forexample.

For the first intermediate layer 15, a metal or an insulator is used,for example. For the first intermediate layer 15, a metal containing atleast one of Cu, Au, and Ag and the like are used, for example. In thecase where a metal is used as the first intermediate layer 15, thethickness of the first intermediate layer 15 is not less than 1 nm andnot more than 7 nm, for example. For the first intermediate layer 15, aninsulator containing at least one of Mg, Al, Ti, and Zn and oxygen isused, for example. A magnesium oxide (MgO etc,), an aluminum oxide(Al₂O₃ etc,), a titanium oxide (TiO etc.), a zing oxide (ZnO etc.), orthe like is used as the first intermediate layer 15, for example. In thecase where an insulator is used as the first intermediate layer 15, thethickness of the first intermediate layer 15 is not less than 1 nm andnot more than 3 nm, for example.

In the case where the first magnetic layer 10 is a magnetization freelayer, an alloy material containing at least one of Fe, Co, and Ni isused for the first magnetic layer 10, for example. A material in whichan additive element is added to the material mentioned above is used,for example.

For the first magnetic layer 10, a material with a largemagnetostriction is used. Specifically, a material of which the absolutevalue of the magnetostriction is larger than 10⁻⁵ is used. Thereby, themagnetization changes sensitively with the strain. For the firstmagnetic layer 10, either a material having a positive magnetostrictionor a material having a negative magnetostriction may be used.

For the first magnetic layer 10, FeCo alloy, NiFe alloy, or the like maybe used, for example. For the first magnetic layer 10, Fe—Co—Si—B alloymay be used, for example. For the first magnetic layer 10, a Tb—M—Fealloy, a Tb-M1-Fe-M2 alloy, an Fe-M3-M4-B alloy, or the like may beused. M represents Sm, Eu, Gd, Dy, Ho, or Er. M1 represents Sm, Eu, Gd,Dy, Ho, or Er. M2 represents Ti, Cr, Mn, Co, Cu, Nb, Mo, W, or Ta. M3represents Ti, Cr, Mn, Co, Cu, Nb, Mo, W, or Ta. M4 represents Ce, Pr,Nd, Sm, Tb, Dy, or Er. A ferrite is Fe₃O₄, (FeCo)₃O₄, or the like. Inthe Tb—M—Fe alloy, the Tb-M1-Fe-M2 alloy, the Fe-M3-M4-B alloy, or thelike, the λs is larger than 100 ppm, for example. For the first magneticlayer 10, Ni, Al—Fe, a ferrite, or the like may be used, for example.

The thickness of the first magnetic layer 10 is 2 nm or more, forexample.

The first magnetic layer 10 includes a two-layer structure, for example.As the first magnetic layer 10, a stacked structure including an FeCoalloy layer is used, for example. For the layer stacked with the layerof FeCo alloy, Fe—Co—Si—B alloy is used, for example. For the layerstacked with the layer of FeCo alloy, a Tb-M-Fe alloy, a Tb-M1-Fe-M2alloy, or an Fe-M3-M4-B alloy is used, for example, M represents Sm, Eu,Gd, Dy, Ho, or Er. M1 represents Sm, Eu, Gd, Dy, Ho, or Er. M2represents Ti, Cr, Mn, Co, Cu, Nb, Mo, W, or Ta. M3 represents Ti, Cr,Mn, Co, Cu, Nb, Mo, W, or Ta. M4 represents Ce, Pr, Nd, Sm, Tb, Dy, orEr. A ferrite is Fe₃O₄, (FeCo)₃O₄, or the like. In the Tb-M-Fe alloy,the Tb-M1-Fe-M2 alloy, or the Fe-M3-M4-13 alloy, the λs is larger than100 ppm. For the layer stacked with the layer of FeCo alloy, a layercontaining at least one of Ni, Al—Fe, and a ferrite is used, forexample.

When the first intermediate layer 15 is a metal, the GMR effect isexhibited, for example. When the first intermediate layer 15 is aninsulator, the TMR effect is exhibited. In the strain sensing element50, the CPP (current perpendicular to plane)-GMR effect in which acurrent is passed along the stacking direction of the strain resistancechange unit 50 s is used, for example.

A CCP (current-confined-path) spacer layer may be used as the firstintermediate layer 15. The CCP spacer layer includes, in part of aninsulating layer, a plurality of metal current paths penetrating in thefilm thickness direction, for example. The width of the metal currentpath is 1 nm or more, for example (for example, the diameter isapproximately 5 nm). The CPP-GMR effect is used also in this case.

Thus, in the embodiment, the inverse magnetostriction phenomenon in thestrain sensing element 50 is used. Thereby, high-sensitivity sensingbecomes possible. When the inverse magnetostriction effect is used, themagnetization direction of at least one of the first magnetic layer 10and the second magnetic layer 20 changes with the strain applied fromthe outside, for example. The relative angle between the magnetizationsof the two magnetic layers changes with the strain applied from theoutside (the presence or absence, the level thereof, etc.). Since theelectric resistance changes with the strain applied from the outside,the strain sensing element 50 functions as a pressure sensor.

FIG. 5A and FIG. 5B are schematic perspective views illustrating theacoustic sensor according to the embodiment. As shown in FIG. 5A, thestrain sensing element 50 includes a first electrode 51 and a secondelectrode 52, for example. The strain resistance change unit 50 s isprovided between the first electrode 51 and the second electrode 52. Inthis example, in the strain resistance change unit 50 s, a buffer layer41, an antiferromagnetic layer 42, a magnetic layer 43, a Ru layer 44,the second magnetic layer 20, the first intermediate layer 15, the firstmagnetic layer 10, and a cap layer 45 are provided in this order fromthe first electrode 51 side toward the second electrode 52 side. Thethickness of the buffer layer 41 is not less than 1 nm and not more than10 nm, for example. The buffer layer 41 is an amorphous layer containingTa or Ti, for example. The buffer layer 41 may serve also as a seedlayer. As the buffer layer 41, a layer of Ru, NiFe, or the like is used,for example. The layer of Ru, NiFe, or the like serves as a seed layerfor the promotion of crystal orientation. A stacked film of these may beused as the buffer layer 41.

The thickness of the antiferromagnetic layer 42 is not less than 5 nmand not more than 10 nm, for example. The thickness of the magneticlayer 43 is not less than 2 nm and not more than 6 nm, for example. Thethickness of the second magnetic layer 20 is not less than 2 nm and notmore than 5 nm, for example. The thickness of the first intermediatelayer 15 is not less than 1 nm and not more than 3 nm, for example. Thethickness of the first magnetic layer is not less than 2 nm and not morethan 5 nm, for example. The thickness of the cap layer 45 is not lessthan 1 nm and not more than 5 nm, for example.

As the second magnetic layer 20, a magnetic stacked film is used, forexample. The first magnetic layer 10 includes a magnetic stacked film 10a for increasing the MR ratio and a high magnetostriction magnetic film10 b provided between the magnetic stacked film 10 a and the cap layer45. The thickness of the magnetic stacked film 10 a is not less than 1nm and not more than 3 nm, for example. The magnetic stacked film 10 acontains CoFe, for example. The thickness of the high magnetostrictionmagnetic film is not less than 1 nm and not more than 5 nm, for example.

The first electrode 51 contains at least one of Au, Cu, Ta, and Al, forexample. These are nonmagnetic. The second electrode 52 contains atleast one of Au, Cu, Ta, and Al, for example. As the first electrode 51and the second electrode 52, a soft magnetic material may be used;thereby, magnetic noise from the outside that influences the strainresistance change unit 50 s is reduced. As the soft magnetic material,permalloy (NiFe alloy) and silicon steel (FeSi alloy) are used, forexample. The strain sensing element 50 is covered with an insulator suchas an aluminum oxide (for example, Al₂O₃) and a silicon oxide (forexample, SiO₂), for example. Thereby, leakage current to thesurroundings is suppressed.

The magnetization direction of at least one of the first magnetic layer10 and the second magnetic layer 20 changes in accordance with thestress. The absolute value of the magnetostriction constant of at leastone magnetic layer (the magnetic layer of which the magnetizationdirection changes in accordance with the stress) is set to 10⁻⁵ or more,for example. Thereby, the magnetization direction changes in accordancewith the strain applied from the outside, due to the inversemagnetostriction effect. For at least one of the first magnetic layer 10and the second magnetic layer 20, an alloy containing at least one ofFe, Co, and Ni or the like is used, for example. The magnetostrictionconstant is set large by the element used, additive elements, etc. Theabsolute value of the magnetostriction constant is preferably large. Theabsolute values of the magnetostriction constants of materials that canbe used as practical devices are approximately 10⁻² or less, forexample.

As the first intermediate layer 15, an oxide such as MgO is used, forexample. The magnetostriction constant of a magnetic layer on a MgOlayer is plus, for example. In the case where the first magnetic layer10 is formed on the first intermediate layer 15, a magnetization freelayer with a stacked configuration of CoFeB/CoFe/NiFe is used as thefirst magnetic layer 10, for example. When the uppermost NiFe layer ismade Ni-rich, the magnetostriction constant of the NiFe layer isnegative and the absolute value thereof is large. The uppermost NiFelayer is not Ni-rich as compared to the permalloy of Ni₈₁Fe₁₉, forexample. Thereby, the cancellation of the plus magnetostriction on anoxide layer is suppressed, for example. The ratio of Ni in the uppermostNiFe layer is preferably set less than 80 atomic percent (atomic %). Inthe case where a magnetization free layer is used as the first magneticlayer 10, the thickness of the first magnetic layer 10 is preferably notless than 1 nm and not more than 20 nm, for example.

In the case where the first magnetic layer 10 is a magnetization freelayer, the second magnetic layer 20 may be either a magnetization fixedlayer or a magnetization free layer.

In the case where the second magnetic layer 20 is a magnetization fixedlayer, substantially the magnetization direction of the second magneticlayer 20 does not change even when a strain is applied from the outside.The electric resistance changes with the relative angle between themagnetizations of the first magnetic layer 10 and the second magneticlayer 20. The strain is sensed by the change in electric resistance.

In the case where both the first magnetic layer 10 and the secondmagnetic layer 20 are a magnetization free layer, the magnetostrictionconstant of the first magnetic layer 10 is set different from themagnetostriction constant of the second magnetic layer 20, for example.

In the case where the second magnetic layer 20 is either a magnetizationfixed layer or a magnetization free layer, the thickness of the secondmagnetic layer 20 is preferably not less than 1 nm and not more than 20nm, for example.

In the case where the second magnetic layer 20 is a magnetization fixedlayer, a synthetic AF structure including a stacked structure of anantimagnetic layer/a magnetic layer/a Ru layer/a magnetic layer and thelike may be used as the second magnetic layer 20, for example. For theantimagnetic layer. IrMn and the like are used, for example. A hard biaslayer may be provided as described later.

The spin of a magnetic layer is used in the strain sensing element 50.The area of the strain sensing element 50 is a very small size, forexample. Assuming that the shape of the strain sensing element 50 is asquare, the size of the strain sensing element 50 is 10 nm or more, forexample 20 nm or more, in terms of the length of one side, for example.

The area of the strain sensing element 50 is sufficiently smaller thanthe area of the transducer thin film 64 that is deformed by pressure,for example. Here, the transducer thin film is the portion surrounded bythe fixed end, as described above. The transducer thin film is designedso as to be deformed by an external pressure. The thickness of thetransducer thin film is a uniform thickness smaller than the thicknessof the fixed end. The area of the strain sensing element 50 (The area ofthe strain sensing element 50 when projected onto the transducer thinfilm 64) is not more than ⅕ of the area of the transducer thin film 64in the substrate plane, for example. The diameter of the transducer thinfilm 64 is approximately not less than 60 μm and not more than 600 μm,for example. When the diameter of the transducer thin film 64 is assmall as approximately 60 μm, the length of one side of the strainsensing element 50 is 12 μm or less, for example.

When the diameter of the transducer thin film is 600 μm, the length ofone side of the strain sensing element 50 is 120 μm or less. This valueis the upper limit of the size of the strain sensing element 50, forexample.

As compared to the value of this upper limit, the size of the length ofone side of not less than 10 nm and not more than 20 nm mentioned aboveis extremely small. It is not necessary to set the size of the strainsensing element 50 excessively small, for example. Thereby, theprocessing accuracy of the element is ensured, for example. Thus, thesize of one side of the strain sensing element 50 is set approximatelynot less than 0.5 μm and not more than 20 μm, for example. If theelement size is extremely small, the magnitude of the antimagnetic fieldgenerated in the strain sensing element 50 is increased; thus, the biascontrol of the strain sensing element 50 may be difficult. When theelement size is large, the handling of the element is easy in theengineering viewpoint. From this point of view, not less than 0.5 μm andnot more than 20 μm are preferable sizes, as described above.

The length along the X-axis direction of the strain sensing element 50is not less than 20 nm and not more than 10 μm, for example. The lengthalong the X-axis direction of the strain sensing element 50 ispreferably not less than 200 nm and not more than 5 μm.

The length along the Y-axis direction of the strain sensing element 50is not less than 20 nm and not more than 10 μm, for example. The lengthalong the Y-axis direction of the strain sensing element 50 ispreferably not less than 200 nm and not more than 5 μm.

The length along the Z-axis direction (the direction perpendicular tothe X-Y plane) of the strain sensing element 50 is not less than 20 nmand not more than 100 nm, for example.

The length along the X-axis direction of the strain sensing element 50may be equal to or different from the length along the Y-axis directionof the strain sensing element 50. When the length along the X-axisdirection of the strain sensing element 50 and the length along theY-axis direction of the strain sensing element 50 are different, shapemagnetic anisotropy occurs, for example. Thereby, the magnetizationdirection of the first magnetic layer 10 can be biased to an appropriateposition, and the first magnetic layer 10 can be made into a singlemagnetic domain.

The direction of the current passed through the strain sensing element50 may be either the direction from the first magnetic layer 10 towardthe second magnetic layer 20, or the direction from the second magneticlayer 20 toward the first magnetic layer 10.

As shown in FIG. 5B, the strain sensing element 50 includes bias layers55 a and 55 b (hard bias layers), for example. The bias layers 55 a and55 b are provided facing the strain resistance change unit 50 s, forexample.

In this example, the second magnetic layer 20 is a magnetization fixedlayer. The bias layer 55 a is juxtaposed to the second magnetic layer20. The bias layer 55 b is juxtaposed to the second magnetic layer 20.The strain sensing element 50 includes the strain resistance change unit50 s between the bias layers 55 a and 55 b. An insulating layer 54 a isprovided between the bias layer 55 a and the strain resistance changeunit 50 s. An insulating layer 54 b is provided between the bias layer55 b and the strain resistance change unit 50 s.

The bias layers 55 a and 55 b apply a bias magnetic field to the firstmagnetic layer 10, for example. Thereby, the magnetization direction ofthe first magnetic layer 10 can be biased to an appropriate position,and the first magnetic layer 10 can be made into a single magneticdomain.

The size (in this example, the length along the Y-axis direction) ofeach of the bias layers 55 a and 55 b is not less than 100 nm and notmore than 10 μm, for example.

The size (in this example, the length along the Y-axis direction) ofeach of the insulating layers 54 a and 54 b is not less than 1 nm andnot more than 5 nm, for example.

The embodiment can provide a high-sensitivity acoustic sensor. Theembodiment can provide an acoustic sensor that can monitor objects withhigh sensitivity in real time, for example.

The acoustic sensor according to the embodiment can be used as a sensorthat detects damage in measuring objects, for example. The acousticsensor according to the embodiment can be used for systems for detectingfaults of measuring objects. Magnetism is utilized in the acousticsensor according to the embodiment. Thereby, objects can be monitoredwith high sensitivity.

The acoustic sensor according to the embodiment is used fornon-destructive testing, for example. In non-destructive testing, damagesuch as cracks generated in mechanical parts and fabrics is detectedwithout breaking the objects. The acoustic sensor is widely used innon-destructive testing.

The method of non-destructive testing using an acoustic sensor isroughly categorized into the ultrasonic detection method and theacoustic emission method. In the ultrasonic detection method, anultrasonic wave is sent and received by an acoustic sensor. In theacoustic emission method, acoustic emission generated by damage of ameasuring object is received. The acoustic emission is a phenomenonbased on the emission of strain energy stored in the measuring object,for example. The acoustic emission is generated by the deformation of amaterial or the occurrence of a crack. The strain energy is emitted asan elastic wave.

In the ultrasonic detection method, a measuring object is investigatedby a sensor installed in periodic inspection or at the time ofabnormality. In the ultrasonic detection method, it is difficult toassess whether safe performance is maintained or not after testing. Inthe ultrasonic detection method, even if an abnormality has occurred ata time between tests, the occurrence of the abnormality is not revealeduntil the next test. If testing using the ultrasonic detection method ismade on a short cycle, costs are increased. There are restrictions onthe use of the measuring object during testing. The ultrasonic detectionmethod may be accompanied by destructive testing.

The acoustic sensor of the embodiment is attached to the measuringobject 810 at all times, for example. The measuring object 810 ismeasured using acoustic emission, for example. Thereby, damage generatedin the measuring object 810 is detected with high sensitivity in realtime.

In an acoustic emission sensor of a reference example, a piezoelectricmaterial such as PZT (lead zirconate titanate) is used for the sensorunit, for example. In the acoustic emission sensor, the vicinity of theresonance point is actively used. Thereby, a small signal can bedetected, for example.

The frequency of the acoustic emission wave varies with the material ofthe measuring object. In the case of metals, the frequency of theacoustic emission wave is approximately not less than 100 kHz and notmore than 1 MHz. In the case of bedrocks, the frequency of the acousticemission wave is approximately not less than 10 kHz and not more than100 kHz, for example.

Piezoelectric materials typified by PZT have not only verticalpiezoelectric effect in which, when an electric field is applied in thepolarization direction, the material expands and contracts in thisdirection, but also horizontal piezoelectric effect in which thematerial contracts in the direction orthogonal to the electric fielddirection when it expands in the electric field direction, and thematerial expands in the direction orthogonal to the electric fielddirection when it contracts in the electric field direction. Theacoustic emission sensor of the reference example mainly utilizes thevertical piezoelectric effect. In this case, the resonance frequency ismainly determined by the thickness of the piezoelectric material, andthe resonance frequency is inversely proportional to the thickness ofthe piezoelectric material. In piezoelectric materials with a relativelylow resonance frequency, such as not less than 10 kHz and less than 100kHz, the thickness of the piezoelectric material is large. To obtain asmall-sized high-sensitivity shape, the ratio between thickness (height)and width (diameter) is almost one. In this case, a compositedeformation in which a strain in the width direction is combined with astrain in the thickness direction occurs. That is, a pure oscillationmode cannot be obtained.

On the other hand, in a sensor of a reference example using MEMS(micro-electromechanical systems) technology not using magnetism, thesensitivity is low in the ultrasonic range. Thus, the MEMS sensor notusing magnetism is used mostly in the sonic range.

In contrast, magnetism is used in the acoustic sensor according to theembodiment. 8 y the embodiment, high sensitivity is obtained even on thehigh frequency side as compared to the MEMS sensor of the referenceexample not using magnetism. Thereby, a high-sensitivity acoustic sensorcan be provided. The resonance frequency in the sensor unit 72 is 100kHz or more, for example. The resonance frequency in the sensor unit 72may be 200 kHz or more, for example. The resonance frequency in thesensor unit 72 is 2 MHz or less, for example.

Second Embodiment

FIG. 6A to FIG. 6D are schematic views illustrating acoustic sensorsaccording to a second embodiment.

FIG. 6A is a schematic cross-sectional view of an acoustic sensor. FIG.66 is a schematic perspective view of part of the acoustic sensor.

In an acoustic sensor 300 c illustrated in FIG. 6A, a plurality ofsensor units 72 are provided. The sizes of the plurality of transducerthin films and the sizes of the plurality of strain sensing elements maybe the same or different.

The acoustic sensor 300 c further includes a second strain sensingelement S2 and a second transmitting material TM2, in addition to thefirst strain sensing element Si, the first film unit F1, and the firsttransmitting material TM1. The base 70 further includes a second filmunit F2. The second film unit F2 is supported by the support 71. Thesecond strain sensing element S2 is provided on the surface of thesecond film unit F2 (a second surface F2 a).

The second transmitting material TM2 is in contact with the second filmunit F2. The second transmitting material TM2 transmits an acoustic waveto the second film unit F2. The second transmitting material TM2 isdisposed in the space partitioned by the support 71 and the second filmunit F2, for example.

FIG. 68 shows the second strain sensing element S2. The second strainsensing element S2 includes a third magnetic layer 30, a fourth magneticlayer 40, and a second intermediate layer 35. The second intermediatelayer 35 is provided between the third magnetic layer 30 and the fourthmagnetic layer 40. The configuration and material described in regard tothe first strain sensing element S1 may be used for the configuration,material, etc. of each layer included in the second strain sensingelement S2, for example.

FIG. 6C is a schematic cross-section view of an acoustic sensor. FIG. 6Dis a schematic perspective view of part of the acoustic sensor.

In the embodiment, a third strain sensing element 53 may be furtherprovided, for example. The third strain sensing element is provided onthe first surface F1 a, for example. The third strain sensing element S3includes a fifth magnetic layer 30 b, a sixth magnetic layer 40 b, and athird intermediate layer 35 b provided between the fifth magnetic layer30 b and the sixth magnetic layer 40 b.

FIG. 6D shows the third strain sensing element S3. The configuration andmaterial described in regard to the first strain sensing element S1 maybe used for the configuration, material, etc. of each layer included inthe third strain sensing element S3, for example.

FIG. 7 is a schematic plan view illustrating part of an acoustic sensoraccording to the second embodiment.

As shown in FIG. 7, a plurality of sensor units 72 are formed integrallyon the base 70, for example. The composite base on which a plurality ofsensor units 72 are formed integrally can be fabricated by usingsemiconductor technology.

The embodiment provides a high-sensitivity acoustic sensor.

Third Embodiment

FIG. 8 is a schematic plan view illustrating an acoustic sensoraccording to a third embodiment.

As shown in FIG. 8, also in an acoustic sensor 300 d according to theembodiment, a plurality of sensor units 72 are provided. The pluralityof sensor units 72 are formed integrally, for example. In this example,the sizes of the transducer thin films 64 included in the plurality ofsensor units 72 are different from one another. Otherwise, the acousticsensor 300 d is similar to the acoustic sensor 300 c.

In this example, the shape of the transducer thin film 64 is a circle.In the embodiment, the shape of the transducer thin film 64 isarbitrary.

The resonance frequency of the sensor unit 72 depends on the size andthickness of the transducer thin film 64. When the shape of thetransducer thin film 64 is a circle, the resonance frequency of thesensor unit 72 depends on the diameter of the transducer thin film 64,for example.

The size of the strain sensing element 50 is not more than 1/50 of thesize of the transducer thin film 64, for example. The influence of thestrain sensing element (the size thereof) on the resonance frequency ofthe sensor unit is small.

In the acoustic sensor 300 d, since the sizes of the plurality oftransducer thin films 64 are different from one another, the resonancefrequencies of the plurality of sensor units 72 are different from oneanother. Sensor units 72 having substantially equal resonancefrequencies may be included among the plurality of sensor units 72.

That is, the acoustic sensor according to the embodiment (the acousticsensor 300 d) includes the base 70, the first strain sensing element S1,and the second strain sensing element S2. The base 70 includes the firstfilm unit F1 and the second film unit F2. The second strain sensingelement S2 is provided on the surface of the second film unit (thesecond surface). The area of the second surface and the area of thesurface of the first film unit (the first surface F1 a) are different.

FIG. 9 is a schematic diagram showing characteristics of the acousticsensor.

The horizontal axis of FIG. 9 is frequency f. The vertical axis isintensity Int.

In the acoustic sensor, the band of the frequency characteristics in onesensor unit 72 is narrow. In this case, the sensitivity is high in theneighborhoods of resonance points.

In the acoustic sensor, a plurality of transducer thin films 64 areprovided. The diameters or thicknesses of the plurality of transducerthin films 64 are different from one another, for example. Thereby, theband widths of the sensor units 72 overlap with one another. Such anarray-type sensor can resonate in a wide frequency range. The frequencycharacteristics of such an array-type sensor are a wide band as a whole.

On the other hand, in the acoustic sensor of the reference exampleutilizing a piezoelectric material such as PZT, a damper (a soundabsorber) is provided on the piezoelectric element, for example. Thedamper absorbs unnecessary vibration to suppress resonance, and the bandis widened. However, the sensitivity of the acoustic sensor of thereference example like this is low. The sensitivity of the acousticsensor according to the embodiment is higher by approximately 10 to dBthan the sensitivity of the acoustic sensor of the reference examplelike that, for example.

In the embodiment, each sensor unit 72 operates in the neighborhood ofthe resonance point, for example. Therefore, an acoustic sensor withhigh sensitivity and wide band characteristics is obtained.

The embodiment provides a high-sensitivity acoustic sensor.

Fourth Embodiment

FIG. 10A to FIG. 10D are schematic plan views illustrating parts ofacoustic sensors according to a fourth embodiment.

As shown in FIG. 10A to FIG. 10D, the shape of the film surface 64 a ofthe transducer thin film 64 (the shape of the first surface F1 a) is acircle, a flat circle (including an ellipse), a square, a rectangle, ora polygon, for example. The shape of the film surface 64 a may be ashape in which the corners of a polygon are rounded, for example. Inthis case, the centroid 64 b of the film surface 64 a is the center ofthe circle, the center of the flat circle, the center of the ellipse,the center of the diagonals of the square, or the center of thediagonals of the rectangle.

In the case of a circular transducer thin film 64, the diameter of thetransducer thin film 64 determines the resonance frequency thereofpredominantly, for example.

In a rectangular transducer thin film 64 having the same area as acircular transducer thin film 64, the length of the short side of therectangle is shorter than the radius of the circle, for example. In thiscase, the length of the short side of the rectangular transducer thinfilm 64 determines the resonance frequency predominantly. That is, theresonance frequency of the rectangular transducer thin film 64 tends tobe higher than the resonance frequency of the circular transducer thinfilm 64 with the same area.

The resonance frequency of the acoustic sensor can be set high by usingthe transducer thin film 64 with such a shape. Also the embodimentprovides a high-sensitivity acoustic sensor.

Fifth Embodiment

FIG. 11A and FIG. 11B are schematic diagrams illustrating acousticsensors according to a fifth embodiment.

The drawings illustrate circuits included in acoustic sensors. Thesecircuits may not be included in the acoustic sensors, and may beconnected to the acoustic sensors.

As shown in FIG. 11A, an acoustic sensor 305 a according to theembodiment includes an electronic circuit unit 618 and a communicationcircuit unit 616. The electronic circuit unit 618 and the communicationcircuit unit 616 are connected to each other. The electronic circuitunit 618 processes the ultrasonic signal detected by the strain sensingelement 50. The communication circuit unit 616 transmits the dataprocessed by the electronic circuit unit 613 to the outside. Theelectronic circuit unit 618 includes an amplifier unit 611, a filter612, an A/D converter 613, a counter 614, and a memory 615, for example.

As shown in FIG. 116, in an acoustic sensor 305 b according to theembodiment, the electronic circuit unit 618 includes an amplifier unit611, a filter 612, an A/D converter 613, a counter 614, a memory 615,and a preamplifier 617, for example.

The amplifier unit 611 amplifies a detected weak electric signal forsubsequent processing. The filter 612 removes extraneous electric ormagnetic noise. The filter 612 includes at least one of a low-passfilter and a high-pass filter. The A/D converter 613 converts an analogsignal to a digital signal. The counter 614 counts the number ofappearances of signals exceeding the prescribed threshold. The memory615 stores the primary processed data. The amplifier unit 611 amplifiesa detected small acoustic emission signal. In the amplification,amplification of 20 dB or more is made, for example.

External noise is likely to get mixed in the signal between the strainsensing element 50 and the amplifier unit 611. In the acoustic sensor305 a according to the embodiment, the amplifier unit 611 is providedinside. Therefore, the cable length between the strain sensing element50 and the amplifier unit 611 is short, and the mixing-in of externalnoise is significantly suppressed between the strain sensing element 50and the amplifier unit 611.

The filter 612 is a band-pass filter, for example. The filter 612 allowssignals in the frequency range of the ultrasonic wave of the objective(for example, 20 kHz to 1 MHz) to pass through, and does not allow thesignals of the other frequencies to pass through (for example,attenuates them), for example. Thereby, the waveforms other than thefrequency band of the objective, such as background noise and whitenoise, are removed.

The cutting-off of the noise transmission path or shielding is made as ameasure against other noise such as acoustic noise having frequencycomponents close to acoustic emission and electric or magnetic noise,for example.

The analog ultrasonic signal is converted to a digital signal by the A/Dconverter 613.

The counter 614 counts the number of acoustic emission events. Thenumber of acoustic emission events is the number of times in which themagnitude of the amplitude of the acoustic emission wave exceeds thepredetermined threshold, for example.

In the acoustic emission wave detected, longitudinal waves, transversewaves, elastic surface waves, and reflected waves of these are mixed.After the generation of acoustic emission, the longitudinal waves arriveat the acoustic sensor first, and the transverse waves arrive next, forexample. The elastic surface waves propagate on the surface of themeasuring object. The number of acoustic emission events measured by thecounter 614 is the cumulative number of detections of these acousticemission waves, for example.

The memory 615 stores the primary data of the electronic circuit unit618 in the acoustic sensor.

The communication circuit unit 616 performs the external communicationof the primary processed data processed by the electronic circuit unit618. The communication circuit unit 616 transmits data to a PC or thelike serving as an intermediate processing unit, for example. Thecommunication circuit unit 616 is connected to a connector and a cablein order to perform external communication.

In a user PC 619 (an intermediate processing unit), an output request619 a or threshold setting 619 b is performed in regard to the acousticsensor, for example.

Sixth Embodiment

FIG. 12 is a schematic cross-sectional view illustrating an acousticsensor according to a sixth embodiment.

As shown in FIG. 12, an acoustic sensor 306 according to the embodimentincludes a power receiving unit 620 in addition to any one of theacoustic sensors according to the first to fifth embodiments. The powerreceiving unit 620 is provided in the housing 90, for example. The powerreceiving unit 620 includes a power receiving unit substrate 621, and anamplifier 622 and a power transfer circuit 623 provided on the powerreceiving unit substrate 621, for example. The power receiving unit 620forms a power receiving unit of ultrasonic wireless power supply, forexample.

FIG. 13 is a schematic diagram illustrating an acoustic sensor accordingto the sixth embodiment.

FIG. 13 illustrates a circuit unit used for an acoustic sensor 306 aaccording to the embodiment. FIG. 13 illustrates a block diagram of apower transfer system using an ultrasonic wave as a transfer means. Thewireless power transfer system based on an ultrasonic wave includes apower transfer unit 630 a and a power receiving unit 630 b.

The power transfer unit 630 a transfers electric power. The powertransfer unit 630 a includes a power source unit 631, a pulse generator632, an amplifier 633, and an ultrasonic transducer 634, for example.The pulse generator 632 generates an AC voltage pulse. The generated ACvoltage pulse is amplified by the amplifier 633, and is applied to theultrasonic transducer 634. Thereby, an ultrasonic wave is generated.

The power receiving unit 630 b receives electric power. The powerreceiving unit 630 b includes an ultrasonic transducer 635, a rectifyingunit 636, a power storage unit 637, and a load 638 (an electroniccircuit), for example. The power receiving unit 630 b converts thereceived ultrasonic wave to DC power. Electric power is supplied to theload 638.

FIG. 14 is a schematic diagram illustrating an acoustic sensor accordingto the sixth embodiment.

FIG. 14 illustrates a rectifying circuit 640 used for an acoustic sensor306 b according to the embodiment. The rectifying circuit 640 is arectifying circuit for a wireless power transfer system. By the powerreceiving unit provided in the housing 90, electric power is suppliedwirelessly without using a cable.

Seventh Embodiment

FIG. 15A to FIG. 15E are schematic cross-sectional views showingacoustic sensors according to a seventh embodiment.

As shown in FIG. 15A, in an acoustic sensor 307, a chip 701 and aprinted circuit board 702 are provided. The chip 701 is attached to theprinted circuit board 702 by an adhesive applied to an chip edge portion701 eg, for example. The printed circuit board 702 is provided with ahole 704 in a position above a diaphragm 703, for example. Thereby, thediaphragm 703 can be deformed. The printed circuit board 702 includes ahole 705 for extracting an interconnection.

As shown in FIG. 15B, the filling of a liquid 706 into the hollowportion 70 h is performed in the liquid 706, for example. After theliquid filling, the liquid may be sealed with a photocurabie resin 70 sor the like, for example. If the liquid injection into the hollowportion 70 h is performed in the air, a difference may occur between thepressure applied to the upper surface of the diaphragm 703 and thepressure applied to the lower surface, and the diaphragm 703 may bewarped. The warpage of the diaphragm can be suppressed by putting theliquid 706 into the hollow portion 70 h in the liquid 706. The chip 701is treated with waterproof coating, for example.

As shown in FIG. 15C, in an acoustic sensor 307 a, the housing 90 isprovided with an injection hole 707 and a vent hole 708. In thisexample, the injection hole 707 and the vent hole 708 are provided atthe side surface of the housing 90.

The liquid 706 is injected into the hollow portion 70 h, and the lowersurface 701 of the liquid 706 is flat, for example. After that, a liquidis injected through the injection hole 707. At this time, the liquid isput in while the gas is removed through the vent hole 708. Thereby, theliquid can be put in with no gas left, for example. After the liquid isput in, the injection hole 707 and the vent hole 708 are sealed. Aphotocurable resin is used for the sealing of the injection hole 707 andthe vent hole 708, for example.

As shown in FIG. 15D, the vent hole 708 may not be provided. The spacesurrounded by the housing and the base is sealed by atmosphericpressure. In this case, after the acoustic sensor is decompressed, theinjection hole 707 is immersed in the liquid 706. After that, theacoustic sensor is returned to atmospheric pressure to cause adifference in atmosphere, and consequently the liquid 706 enters thehollow portion 70 h in the housing 90. Although the diaphragm is bentdownward during decompression, it returns to its original position whenreturned to atmospheric pressure. Finally, the injection hole 707 issealed. A photocurable resin is used for the sealing of the injectionhole 707, for example. In the acoustic sensor according to theembodiment, by using such a method for liquid filling, a liquid can beput in without generating a strain on the diaphragm after the liquidfilling.

As shown in FIG. 15E, in an acoustic sensor 307 b, the liquid 706 isdisposed under a chip 701 b. The strain sensing element 50 may come intocontact with the surrounding liquid 706 and a short circuit may beformed. The strain sensing element 50 is treated with waterproofcoating, for example.

The diameter of the diaphragm is not less than 1 μm and not more than 3mm, for example. It is preferably not less than 60 μm and not more than1 mm. The diameter of the strain sensing element 50 is 20 μm, forexample. Therefore, the influence of the waterproof coating of thestrain sensing element 50 on the strain of the diaphragm 703 is small.

FIG. 16 is a schematic diagram showing an acoustic emission wave.

As a break of the measuring object 810 comes closer, the frequency ofoccurrence of acoustic emission becomes higher, for example. The degreeof degradation of the measuring object 810 is estimated by measuring theoccurrence of acoustic emission. As shown in FIG. 16, the number oftimes in which the amplitude waveform AM1 of the acoustic emission waveexceeds the prescribed value DL1 is measured.

Eighth Embodiment

FIG. 17 is a schematic diagram illustrating an acoustic sensor systemaccording to an eighth embodiment.

As shown in FIG. 17, in an acoustic sensor system 350 according to theembodiment, a plurality of acoustic sensors are used. In this example, aplurality of acoustic sensors 300 a are used. As the acoustic sensor,any acoustic sensor according to the embodiments described above andmodifications thereof may be used. By the plurality of acoustic sensors,the accuracy of position identification (position location) of anacoustic emission generation source 710 is improved, for example. Theinterval of installation of acoustic sensors is set narrower than thepropagation distance of acoustic emission in the measuring object 810,for example. A plurality of acoustic sensors 300 a are arranged on astraight line, for example. Thereby, the one-dimensional position of theacoustic emission generation source 710 can be identified, for example.A plurality of acoustic sensors 300 a are arranged on the same plane,for example. Thereby, the two-dimensional position of the acousticemission generation source 710 can be identified, for example. Aplurality of acoustic sensors 300 a are arranged on a plurality ofplanes, for example. Thereby, the three-dimensional position of theacoustic generation source 710 can be identified, for example.

The embodiment provides an acoustic sensor and an acoustic sensorsystem.

In the specification of the application, “perpendicular” and “parallel”refer to not only strictly perpendicular and strictly parallel but alsoinclude, for example, the fluctuation due to manufacturing processes,etc. It is sufficient to be substantially perpendicular andsubstantially parallel.

Hereinabove, embodiments of the invention are described with referenceto specific examples. However, the embodiment of the invention is notlimited to these specific examples. For example, one skilled in the artmay appropriately select specific configurations of components ofacoustic sensors and acoustic sensor systems such as bases, sensorunits, film units, transducer thin films, fixing units, strain sensingelements, magnetic layers, intermediate layers, transmitting materials,acoustic matching layers, and signal processing circuits from known artand similarly practice the invention. Such practice is included in thescope of the invention to the extent that similar effects thereto areobtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all acoustic sensors and acoustic sensor systems practicableby an appropriate design modification by one skilled in the art based onthe acoustic sensors and the acoustic sensor systems described above asembodiments of the invention also are within the scope of the inventionto the extent that the spirit of the invention is included.

Various other variations and modifications can be conceived by thoseskilled in the art within the spirit of the invention, and it isunderstood that such variations and modifications are also encompassedwithin the scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

1-20. (canceled)
 21. An acoustic sensor comprising: a base including asupport and a first film supported by the support, the first film beingflexible; a first strain sensing element provided on a first surface ofthe first film, the first strain sensing element including a firstmagnetic layer, a second magnetic layer, and a first intermediate layerprovided between the first magnetic layer and the second magnetic layer;a first member; and a second member being provided between the firstmember and the first film, a first acoustic impedance of the firstmember being higher than a second acoustic impedance of the secondmember.
 22. The acoustic sensor according to claim 21, wherein thesecond member contacts the first member.
 23. The acoustic sensoraccording to claim 21, wherein an electric resistance between the firstmagnetic layer and the second magnetic layer is variable in accordancewith an acoustic wave received by the first member.
 24. The acousticsensor according to claim 21, wherein the second member is disposed in aspace partitioned by the support and the first film.
 25. The acousticsensor according to claim 21, wherein the first layer includes a solid,and the second layer includes at least one of a liquid and a gel. 26.The acoustic sensor according to claim 21, further comprising a thirdmember provided between the first member and the second member, a thirdacoustic impedance of the third member is between the first acousticimpedance and the second acoustic impedance.
 27. The acoustic sensoraccording to claim 26, wherein the second member includes at least oneof an epoxy-based adhesive, wax, grease, and a silicone compound. 28.The acoustic sensor according to claim 26, further comprising: ahousing, wherein the base, the first strain sensing element, the secondmember and the third member are provided in the housing.
 29. Theacoustic sensor according to claim 21, wherein the second memberincludes at least one of a liquid, a gel, and a solid.
 30. The acousticsensor according to claim 21, wherein the second member includes atleast one of water, glycerin, mercury, and rubber.
 31. The acousticsensor according to claim 21, further comprising: a second strainsensing element; the base further including a second film supported bythe support, the second strain sensing element being provided on asecond surface of the second film, the second strain sensing elementincluding a third magnetic layer, a fourth magnetic layer, and a secondintermediate layer provided between the third magnetic layer and thefourth magnetic layer; a third member; and a fourth member beingprovided between the third member and the second film, a third acousticimpedance of the third member being higher than a fourth acousticimpedance of the fourth member.
 32. The acoustic sensor according toclaim 31, wherein an area of the first surface is different from an areaof the second surface.
 33. The acoustic sensor according to claim 31,wherein a resonance frequency of the first film is different from aresonance frequency of the second film.
 34. An acoustic sensor systemcomprising the acoustic sensor according to claim 21 provided in aplurality.
 35. An acoustic sensor comprising: a base including a supportand a first film supported by the support, the first film beingflexible; a first strain sensing element provided on a first surface ofthe first film, the first strain sensing element including a firstmagnetic layer, a second magnetic layer, and a first intermediate layerprovided between the first magnetic layer and the second magnetic layer;a first member including a solid; and a second member being providedbetween the first member and the first film, the second membercontacting the first film, the second layer including at least one of aliquid and a gel.
 36. The acoustic sensor according to claim 35, whereinthe second member directly contacts the first member.
 37. he acousticsensor according to claim 35, wherein an electric resistance between thefirst magnetic layer and the second magnetic layer is variable inaccordance with an acoustic wave received by the first member.
 38. Anacoustic sensor comprising: a base including a support and a first filmsupported by the support, the first film being flexible; a first strainsensing element provided on a first surface of the first film, the firststrain sensing element including a first magnetic layer, a secondmagnetic layer, and a first intermediate layer provided between thefirst magnetic layer and the second magnetic layer; a first memberincluding a gel; and a second member being provided between the firstmember and the first film, the second member contacting the first film,the second layer including a liquid.
 39. The acoustic sensor accordingto claim 38, wherein the second member directly contacts the firstmember.
 40. The acoustic sensor according to claim 38, wherein anelectric resistance between the first magnetic layer and the secondmagnetic layer is variable in accordance with an acoustic wave receivedby the first member.